一种130纳米SiGe BiCMOS的ka波段四叠功率放大器

2020 13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT) Pub Date : 2020-08-29 DOI:10.1109/ucmmt49983.2020.9296123

Hao Zhang, Kenan Xie, Keping Wang

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引用次数: 0

摘要

本文设计了一种32- 38ghz单级SiGe BiCMOS功率放大器。为了保持宽带带宽，级间并联电感用于共振消除堆叠bjt之间的寄生电容。威尔金森功率分配器/组合器也用于提高输出功率。功率放大器采用130nm SiGe BiCMOS技术设计。饱和输出功率(PSAT)为21 dBm，峰值PAE为39%。在32-38 GHz范围内，增益大于17.5 dB。包括衬垫在内，芯片面积为2.09 mm2。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Ka-Band 4-Stack Power Amplifier in 130-nm SiGe BiCMOS

In this paper, a single-stage SiGe BiCMOS power amplifier is demonstrated for 32-38 GHz with the stacked BJTs. To maintain a wideband bandwidth, interstage shunt inductors are used to resonate out the parasitic capacitance between the stacked BJTs. The Wilkinson power divider/combiner are also used to boost the output power. The power amplifier is designed in a 130nm SiGe BiCMOS technology. It achieves a saturated output power (PSAT) of 21 dBm and a peak PAE of 39%. The gain is larger than 17.5 dB from 32-38 GHz. The chip area is 2.09 mm2 including pads.

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2020 13th UK-Europe-China Workshop on Millimetre-Waves and Terahertz Technologies (UCMMT)

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