基于MOS-NDR器件和电路的新型压控振荡器设计

Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05) Pub Date : 2005-07-20 DOI:10.1109/IWSOC.2005.87

Dong-Shong Liang, K. Gan, Chung-Chih Hsiao, Cher-Shiung Tsai, Y. Chen, Shih-Yu Wang, Shun-Huo Kuo, Feng-Chang Chiang, Long-Xian Su

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引用次数: 7

摘要

本文介绍了一种基于负差分电阻器件的压控振荡器(VCO)的设计。工作中使用的NDR器件完全由金属氧化物半导体场效应晶体管(MOS)器件组成。该MOS-NDR器件通过合理安排MOS参数，可以在其电流-电压曲线上表现出NDR特性。该VCO由三个低功耗MOS-NDR逆变器构成。这种新型压控振荡器的工作频率范围为151MHz至268MHz。它使用2v电源，在260MHz的中心频率消耗24.5mW。该VCO采用0.35 /spl mu/m CMOS工艺制作，占地面积为120 /spl倍/ 86 /spl mu/m/sup / 2/ m2。

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Novel voltage-controlled oscillator design by MOS-NDR devices and circuits

This paper describes the design of a voltage-controlled oscillator (VCO) based on the negative differential resistance (NDR) devices. The NDR devices used in the work is fully composed by the metal-oxide-semiconductor field-effect-transistor (MOS) devices. This MOS-NDR device can exhibit the NDR characteristic in its current-voltage curve by suitably arranging MOS parameters. The VCO is constructed by three low-power MOS-NDR inverter. This novel VCO has a range of operation frequency from 151MHz to 268MHz. It consumes 24.5mW in its central frequency of 260MHz using a 2 V power supply. This VCO is fabricated by 0.35 /spl mu/m CMOS process and occupied an area of 120 /spl times/ 86 /spl mu/m/sup 2/.

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Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)

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