Hyun-Woo Lee, Won-Joo Yun, Jong-Jin Lee, Ki-Han Kim, N. Park, Kwan-Weon Kim, Young-Jung Choi, Jin-Hong Ahn, Byong-Tae Chung
{"title":"一种低功耗、高性能、抗噪声环境的鲁棒数字延迟锁定环","authors":"Hyun-Woo Lee, Won-Joo Yun, Jong-Jin Lee, Ki-Han Kim, N. Park, Kwan-Weon Kim, Young-Jung Choi, Jin-Hong Ahn, Byong-Tae Chung","doi":"10.1109/ASSCC.2008.4708773","DOIUrl":null,"url":null,"abstract":"A new low power and high performance robust digital delay locked loop is presented. The DLL has dual loops with single replica block, different-type dual DCC at input and output, replay mode function, rising edge scanner and self-calibrated power down controller (SCPDC) for stable power management. The digital DLL used for multi-Gbps graphics SDRAM is fabricated using a 66 nm DRAM process technology. Experimental results show duty-corrected clock from external duty error of plusmn10%, less than 400 cycle locking time, 1.4 GHz operation frequency at 1.7 V and 1.7 GHz at 2.0 V.","PeriodicalId":143173,"journal":{"name":"2008 IEEE Asian Solid-State Circuits Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A low power and high performance robust digital delay locked loop against noisy environments\",\"authors\":\"Hyun-Woo Lee, Won-Joo Yun, Jong-Jin Lee, Ki-Han Kim, N. Park, Kwan-Weon Kim, Young-Jung Choi, Jin-Hong Ahn, Byong-Tae Chung\",\"doi\":\"10.1109/ASSCC.2008.4708773\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new low power and high performance robust digital delay locked loop is presented. The DLL has dual loops with single replica block, different-type dual DCC at input and output, replay mode function, rising edge scanner and self-calibrated power down controller (SCPDC) for stable power management. The digital DLL used for multi-Gbps graphics SDRAM is fabricated using a 66 nm DRAM process technology. Experimental results show duty-corrected clock from external duty error of plusmn10%, less than 400 cycle locking time, 1.4 GHz operation frequency at 1.7 V and 1.7 GHz at 2.0 V.\",\"PeriodicalId\":143173,\"journal\":{\"name\":\"2008 IEEE Asian Solid-State Circuits Conference\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Asian Solid-State Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2008.4708773\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2008.4708773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low power and high performance robust digital delay locked loop against noisy environments
A new low power and high performance robust digital delay locked loop is presented. The DLL has dual loops with single replica block, different-type dual DCC at input and output, replay mode function, rising edge scanner and self-calibrated power down controller (SCPDC) for stable power management. The digital DLL used for multi-Gbps graphics SDRAM is fabricated using a 66 nm DRAM process technology. Experimental results show duty-corrected clock from external duty error of plusmn10%, less than 400 cycle locking time, 1.4 GHz operation frequency at 1.7 V and 1.7 GHz at 2.0 V.