掺硼双壁碳纳米管的结构特性

S. Lyu, Kitae Ahn, Jonghun Han, K. Shin, J. Sok
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引用次数: 3

摘要

硼掺杂碳纳米管可以改变碳纳米管的电子结构。碳网中硼原子的取代产生了p型掺杂。在这篇文章中,我们展示了在900°C的Fe-Mo/MgO催化剂上,通过催化分解四氢呋喃(THF)和硼酸三异丙基来合成高质量的硼掺杂DWCNTs。为了实现原位硼掺杂和DWCNTs的生长,我们通过将Ar气体通过含有硼酸三异丙基/甲醇液体的起泡器来控制硼前驱体的浓度。我们还从TEM和拉曼光谱结果中评估了DWCNTs的结构性质和掺杂效果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Structural property of boron-doped double-walled carbon nanotubes
The doping of CNTs with boron appears promising in view of the changes brought about in the electronic structures by these dopants. The substitution of boron atom in carbon network gives rise to p-type doping. In this communication, we demonstrate the synthesis of high-quality boron doped DWCNTs by catalytic decomposition of tetra hydro furan (THF) and triisopropyl borate over Fe-Mo/MgO catalyst at 900 °C. In order to achieve in-situ boron doping and growth for DWCNTs, we controlled concentration of boron precursors by passing the Ar gas through the bubbler, which contained liquid triisopropyl borate/methanol. We also evaluate structural properties and doping effect of DWCNTs from the TEM and Raman results.
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