基于InAs/InP三势垒异质结构的选择性气体传感器电子输运计算

S. Caicedo-Dávila, J. F. Rivera, Jaime Velasco-Medina
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引用次数: 0

摘要

本文给出了一种InAs/InP三势垒异质结构的电子输运计算结果,该异质结构可用作气体传感器来识别室温下气味分子的振动。我们使用一维方法对纳米结构进行建模,并使用非平衡格林函数计算透射率、态密度和电流与电压特性。通过分析不同电压下井区的局部态密度,并将其与二氧化硫的振动模态能量进行比较,证明了该装置的合理性。我们证明了这种分子可以通过扫描0到0.4V的电压来检测。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electronic transport calculation for a selective gas sensor based on an InAs/InP triple-barrier heterostructure
In this paper we present the results of electronic transport calculations of an InAs/InP triple-barrier heterostructure that can be used as a gas sensor to recognize the vibrations of odorant molecules at room temperature. We modeled the nanostructure using a 1D approach, and calculated the transmission, density of states and the current vs. voltage characteristics using the non-equilibrium Green's function. The plausibility of such device is demonstrated by analyzing the local density of states in the well regions at different voltages, and comparing it to the energies of the vibrational modes of sulfur dioxide. We show that this molecule can be detected by scanning the voltage from 0 to 0.4V.
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