非均质集成有源硅基光子学

2008 10th Anniversary International Conference on Transparent Optical Networks Pub Date : 2008-06-22 DOI:10.1109/ICTON.2008.4598581

B. Jaskorzyńska, L. Wosinski, S. Lourdudoss, F. Olsson

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引用次数: 0

摘要

我们回顾了通过与III-V半导体或非线性有机材料的非均相集成实现硅基有源元件的重大突破。我们将更详细地描述我们的概念和实现这一目标的技术方法的示例。这包括广泛可调谐滤波器的设计和硅上InP的异质外延和选择性面积生长的新途径。

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Active Si-based photonics via heterogeneous integration

We review major breakthroughs in realizing silicon-based active components by heterogeneous integration with III-V semiconductors, or nonlinear organic materials. In more detail we describe examples of our concepts and technological approach addressing this goal. This includes designs for widely tunable filters and new routes for heteroepitaxy and selective area growth of InP on silicon.

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2008 10th Anniversary International Conference on Transparent Optical Networks

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