H. Augustin, N. Berger, S. Dittmeier, D. Immig, Dohun Kim, Lukas Mandok, A. M. González, M. Menzel, L. Noehte, I. Peri'c, A. Schmidt, A. Schoning, L. Vigani, A. Weber, Benjamin Weinlader
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引用次数: 10
摘要
经过多年对高压单片有源像素传感器(HVMAPS)的研究和开发,Mu3e像素传感器的最终设计达到了高潮。MuPix10是一款全单片传感器,其有源像素矩阵尺寸为$20\times20\,\mathrm{mm}^2$,采用TSI半导体的$180\,\mathrm{nm}$ HV-CMOS工艺生产。像素大小为$80\times80\,\mathrm{\mu m}^2$。点击使用列漏架构读出,并通过多达四个串行链接发送,每个链接最多$1.6\,\left.\mathrm{Gbit}\middle/\mathrm{s}\right.$。通过DC/DC转换器和片上偏置的独家使用,MuPix10可以用最少的电气连接完全运行。这是Mu3e实验的一个不可或缺的要求,因为它使超薄像素模块的构建具有 $0.1\,$% of a radiation length per layer. First results from lab characterisation and testbeam campaigns are presented.
Many years of research and development of High Voltage Monolithic Active Pixel Sensors (HVMAPS) have culminated in the final design for the Mu3e pixel sensor. MuPix10 is a fully monolithic sensor with an active pixel matrix size of $20\times20\,\mathrm{mm}^2$ produced in the $180\,\mathrm{nm}$ HV-CMOS process at TSI Semiconductors. The pixel size is $80\times80\,\mathrm{\mu m}^2$. Hits are read out using a column-drain architecture and sent over up to four serial links with up to $1.6\,\left.\mathrm{Gbit}\middle/\mathrm{s}\right.$ each. By means of DC/DC converters and exclusive usage of on-chip biasing, MuPix10 is fully operable with a minimal set of electrical connections. This is an integral requirement by the Mu3e experiment since it enables the construction of ultra-thin pixel modules with $0.1\,$% of a radiation length per layer. First results from lab characterisation and testbeam campaigns are presented.