超高电流密度功率mosfet的特性

8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings Pub Date : 1996-05-20 DOI:10.1109/ISPSD.1996.509470

J. Evans, G. Amaratunga

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引用次数: 15

摘要

本文提出了功率MOSFET工作的一种新的描述，旨在帮助设计在高电流密度下工作的器件。我们分析了功率MOSFET (DMOS或UMOS)内的电荷平衡，并展示了这些电荷平衡如何共同决定器件的操作。我们报道了一种具有0.8 /spl mu/m单元和0.4 /spl mu/m沟槽宽度=540/spl times/10/sup 6/ cells/in/sup 2/的UMOS器件的制造。

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The behaviour of very high current density power MOSFETs

This paper presents a new description of the operation of a power MOSFET which is aimed at assisting in the design of devices which operate at high current densities. We analyse the charge balances within a power MOSFET (DMOS or UMOS) and show how these conspire to dictate the operation of the device. We report on the manufacture of a UMOS device with 0.8 /spl mu/m cells with 0.4 /spl mu/m trench widths=540/spl times/10/sup 6/ cells/in/sup 2/.

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8th International Symposium on Power Semiconductor Devices and ICs. ISPSD '96. Proceedings

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