A. Kohl, A. M. Kusters, R. Muller, S. Brittner, K. Heime, J. Finders, M. Keuter, J. Geurts
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引用次数: 1
摘要
为了克服含al层所带来的问题，作者开发了一种双异质结构高电子迁移率晶体管(HEMT)设计，该晶体管仅含有p和n掺杂的InP和GaInAs。采用低压金属有机气相外延法(LP-MOVPE)生长薄膜。这些器件表现出非常好的性能。这种材料体系存在着界面突然性的问题。因此，利用拉曼光谱研究了反应气体开关顺序的影响。在此基础上，制作了一系列的hemt，以研究不同的接口配置对器件性能的影响。结果表明，g/sub next /、f/sub T/和I/sub DSS/等载流子的霍尔迁移率可以通过适当调整气体开关顺序来提高。
Effect of interface properties on the characteristics of InP/GaInAs high electron mobility transistors
To overcome problems due to Al-containing layers the authors have developed a double heterostructure high electron mobility transistor (HEMT) design which only contains p- and n-doped InP and GaInAs. The layers were grown by low pressure metal organic vapor phase epitaxy (LP-MOVPE). These devices show very good performance. This material system suffers from problems with the abruptness of the interface. Therefore the effect of gas switching sequencies of the reactive gases was investigated using Raman spectroscopy. Based on these results a series of HEMTs was fabricated to investigate the impact of different interface configurations on device performance. It is shown that Hall mobilities of carriers, g/sub mext/, f/sub T/ and I/sub DSS/ can be improved by a proper adjustment of gas switching sequencies.<>
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