金属波函数对MOS太阳能电池IV特性的影响

Conference Proceedings., Eleventh International Telecommunications Energy Conference Pub Date : 1989-10-15 DOI:10.1109/INTLEC.1989.88363

P. Bhatnagar, K. Jain

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引用次数: 0

摘要

结果表明，金属波函数穿透效应在精确计算I-V特性时不可忽视。对比了在考虑金属波穿透作用和不考虑金属波穿透作用的情况下，不同氧化层厚度下电位随x/d的变化情况。在计算典型MOS太阳能电池δ =10 A/sup 0/时V/sub oc/的变化时，可以观察到δ V/sub oc/为20.1/sup 8/ mV，约占总V/sub oc/的4%。这指出了一个重要的相互波函数效应

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Effect of metal wave function on the IV characteristics of MOS solar cell

Results are presented which indicate that the metal wave function penetration effect cannot be neglected in calculating accurate I-V characteristics. The authors show a comparison between the variations of potential with x/d for different values of oxide layer thickness with and without considering the effect of metal wave penetration. On calculating the change in V/sub oc/ for delta =10 A/sup 0/ for a typical MOS solar cell it is observed that delta V/sub oc/ comes out to be 20.1/sup 8/ mV, which is approximately 4% of the total V/sub oc/. This points to a significant mutual wave function effect.<>

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Conference Proceedings., Eleventh International Telecommunications Energy Conference

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