新型石墨结构的设计

J. Phillips, Z. Leseman, J. Cordaro, C. Luhrs, M. Al-Haik
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引用次数: 8

摘要

石墨结构设计(GSD)是一种利用普通实验室设备,在低温(约500°C)下,以精确的模式从纳米到宏观尺度快速(>1层/秒)生长石墨的新技术。GSD过程包括将作为“模板”的特定金属(Ni, Pd, Pt, Co)暴露在富含燃料的燃烧环境中。例如,我们彻底表征了石墨在乙烯和氧气的混合物(O2 /C2 H4比<3)中在镍上的生长,并发现在大约500到700°C之间的温度下,石墨以一阶石墨烯层/秒的速度以与金属模板形状非常一致的几何形状生长。到目前为止,用GSD制造的石墨结构包括尺寸为英寸的二维“屏幕”,但由微米级石墨泡沫、中空纳米颗粒和微米级颗粒组成。石墨生长的所有替代技术都需要特殊的设备,如2000°C +的烤箱和多个步骤。替代方案也不适合二维或三维中的各种模式增长。我们建议将重点从证明GSD转向确定石墨生长机制。GSD可满足新一代集成电路的多项公认技术需求。定向石墨的精确模式被设想为:i)在一些航空航天和运输应用中作为碳纤维的结构元件的替代品,ii)作为ic中帮助热管理的导热途径,iii)作为ic中的电导管,iv)作为纳米级逻辑电路的基本元件。在所有这些集成电路应用中,GSD石墨可以说优于旧的、被广泛研究的碳纳米管技术,原因有很多:只有GSD才能在任何表面上以任何模式生长,GSD要干净得多(与纳米管相比,石墨结构中没有金属残留),GSD结构可以在低温下一致且廉价地形成,并且只有GSD可以很容易地生长成一些传热应用所需的大型设计宏观结构。ASME版权所有©2007
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel Graphitic Structures by Design
Graphitic Structures by Design (GSD) is a novel technology for growing graphite in precise patterns from the nano to the macroscale, rapidly (>1 layer/sec), at low temperatures (ca. 500°C), and in a single step using ordinary laboratory equipment. The GSD process consists of exposing particular metals (Ni, Pd, Pt, Co), which act as ‘templates’, to a fuel rich combustion environment. As an example, we have thoroughly characterized graphite growth on nickel in a mixture of ethylene and oxygen (O2 /C2 H4 ratio<3), and found that it grows in a geometry remarkably consistent with the shape of the metal template at a rate of the order one graphene layer/second at temperatures between about 500 and 700°C. Graphite structures created with GSD to date include two dimensional ‘screens’ that are inches in extent, yet are composed of micron scale squares graphite foam, hollow nanoparticles, and micron scale particles. All alternative technologies for graphite growth require specialty equipment, such as 2000 °C + ovens, and multiple steps. The alternatives are also not suited for a wide variety of pattern growth in either two or three dimensions. We propose to change focus from demonstrating GSD to determination of the mechanism of graphite growth. GSD could meet a number of recognized technological needs for future generation integrated circuits (IC). Precise patterns of oriented graphite are envisioned as: i) replacements of carbon fibers as structural elements in some aerospace and transport applications, ii) as heat conductive pathways aiding thermal management in ICs iii) as electrical conduits in ICs, iv) as the basic elements of nano-scale logic circuits. GSD graphite is arguably superior to the older and more broadly studied carbon nanotubes technology for all these IC applications for many reasons: only GSD be grown in any pattern on any surface, GSD is far cleaner (no metal residue in the graphite structure, in contrast to nanotubes), GSD structures can be formed consistently and cheaply, at low temperature, and only GSD can be readily grown into large designed macrostructures required for some heat transfer applications.Copyright © 2007 by ASME
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