1.2V 55mW 12位自校准双残差模拟-数字转换器在90纳米CMOS

A. Zjajo, J. P. D. Gyvez
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引用次数: 1

摘要

本文报道了12位双残差多步A/D转换器的设计、优化、效率和测量结果。在基于最陡下降估计法的校准过程中,采用了专用的嵌入式传感器,该传感器可以记录芯片上的工艺参数和温度变化。原型A/D转换器在60 MS/s下具有68.6 dB SNDR、70.3 dB SNR、78.1 dB SFDR和11.1 ENOB的性能,其功耗仅为55 mW,尺寸为0.75 mm2。片上校准逻辑占地0.14 mm2,功耗11 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1.2V 55mW 12bits self-calibrated dual-residue analog to digital converter in 90 nm CMOS
This paper reports design, optimization, efficiency and measurement results of the 12 bits dual-residue multi-step A/D converter. The calibration procedure based on the steepest-descent estimation method is enhanced with dedicated embedded sensors, which register on-chip process parameter and temperature variations. The prototype A/D converter with performance of 68.6 dB SNDR, 70.3 dB SNR, 78.1 dB SFDR, 11.1 ENOB at 60 MS/s has been fabricated in standard single poly, six metal 90 nm CMOS, consumes only 55 mW and measures 0.75 mm2. The on-chip calibration logic occupies an area of 0.14 mm2 and consumes 11 mW of power.
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