{"title":"半导体硅锭中载流子寿命和扩散长度的激光层析成像","authors":"V. Akhmetov, N. Fateev","doi":"10.1109/APEIE.2000.913092","DOIUrl":null,"url":null,"abstract":"A nondestructive method for estimating quality of single-crystal Si ingots is proposed. The method provides a three-dimensional pattern of the lifetime and diffusion length of charge carriers inside Si ingots up to 300 mm in diameter and 1 m in length. The method employs laser-induced photoinjection of charge carriers followed by laser-assisted monitoring of their spatial distributions and time evolution in any part of the ingot.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Laser tomography of the lifetime and diffusion length of charge carriers in semiconductor silicon ingots\",\"authors\":\"V. Akhmetov, N. Fateev\",\"doi\":\"10.1109/APEIE.2000.913092\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A nondestructive method for estimating quality of single-crystal Si ingots is proposed. The method provides a three-dimensional pattern of the lifetime and diffusion length of charge carriers inside Si ingots up to 300 mm in diameter and 1 m in length. The method employs laser-induced photoinjection of charge carriers followed by laser-assisted monitoring of their spatial distributions and time evolution in any part of the ingot.\",\"PeriodicalId\":184476,\"journal\":{\"name\":\"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEIE.2000.913092\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEIE.2000.913092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Laser tomography of the lifetime and diffusion length of charge carriers in semiconductor silicon ingots
A nondestructive method for estimating quality of single-crystal Si ingots is proposed. The method provides a three-dimensional pattern of the lifetime and diffusion length of charge carriers inside Si ingots up to 300 mm in diameter and 1 m in length. The method employs laser-induced photoinjection of charge carriers followed by laser-assisted monitoring of their spatial distributions and time evolution in any part of the ingot.
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