通过和寻址内存(SAM)实现低负载延迟

William L. Lynch, G. Lauterbach, J. Chamdani
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引用次数: 17

摘要

负载延迟对执行时间有很大影响。由于大多数缓存访问命中,因此缓存命中延迟成为预期负载延迟的重要组成部分。大多数现代微处理器都有基+偏移寻址负载;因此,有效的缓存命中延迟包括额外的RAM访问。本文介绍了一种用于UltraSPARC III微处理器和寻址存储器(SAM)的新技术,该技术利用RAM阵列的解码器进行真加法运算,具有非常低的延迟。我们将SAM与其他方法进行了比较,以减少负载延迟的添加部分。这些方法包括带恢复的和预测和带重复容错的位索引。结果表明,SAM具有优异的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low load latency through sum-addressed memory (SAM)
Load latency contributes significantly to execution time. Because most cache accesses hit, cache-hit latency becomes an important component of expected load latency. Most modern microprocessors have base+offset addressing loads; thus effective cache-hit latency includes an addition as well as the RAM access. This paper introduces a new technique used in the UltraSPARC III microprocessor Sum-Addressed Memory (SAM), which performs true addition using the decoder of the RAM array, with very low latency. We compare SAM with other methods for reducing the add part of load latency. These methods include sum-prediction with recovery, and bitwise indexing with duplicate-tolerance. The results demonstrate the superior performance of SAM.
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