350nm CMOS有源像素传感器电子学比较分析

2015 30th Symposium on Microelectronics Technology and Devices (SBMicro) Pub Date : 2015-08-01 DOI:10.1109/SBMICRO.2015.7298138

L. C. Costa, Artur S. B. de Mello, L. P. Salles, D. W. de Lima Monteiro

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引用次数: 7

摘要

本文给出了主动像素传感器(APS)电路在6种不同单元设计下的实验和仿真结果。使用的光学传感器是一个硅光电二极管，其电子元件集成在标准的350nm CMOS技术中。对不同类型的电路进行了比较，以确定不同辐照度值下的工作特性。结果对于指导不同应用程序的选择非常重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparative analysis of 350nm CMOS Active Pixel Sensor electronics

This paper presents experimental and simulated results of the Active Pixel Sensor (APS) circuit operating in 6 different cell designs. The optical sensor used was a silicon photodiode integrated with its electronics in a standard 350nm CMOS technology. Comparison between the types of circuits was made to determine the operational characteristics for different irradiance values. The results are important to guide choices for different applications.

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2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)

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