A wide-band CMOS low noise amplifier for LTE application

In this work, a wide band LNA for implementation in Long Term Evolution (LTE) systems is presented. A common gate amplifier with active noise cancellation is adopted to provide wide band input matching and a low noise figure (NF). To mitigate parastics and obtain improved noise performance, an inner-cascode inductor is added. The inter-cascode inductor also allows for bandwidth extension without significant peaking in the frequency response with voltage gain 17.3dB. The proposed LNA is designed in 0.18 um CMOS technology. From post-layout simulations, the design consumes 9.5 mA from a 1.8 V supply and operates in the frequency range of 0.7–2.7 GHz. The simulations also show S11<−10, a 2dB NF, and an IIP3 of approximately 5 dBm.