J. Grochowski, M. Guziewicz, R. Kruszka, M. Borysiewicz, K. Kopalko, A. Piotrowska
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Fabrication and characterization of p-NiO/n-ZnO heterojunction towards transparent diode
The aim of our work was to produce p-n heterojunction with the high level of optical transmission. P-type NiO and n-type ZnO:Al films deposited by magnetron sputtering were used to fabricate p-n diodes. These were thermally processed in Ar ambient at 400°C in order to obtain high optical transmission and better electrical characteristics. The best diode's parameters were rectifying ratio of 6.7·104 and reverse current at the level of 6·10-7A at -3 V of bias. The best obtained optical transmission of the bilayer was near 20% in the visual wavelength region.
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