S. Pavlov, H. Hubers, R. Zhukavin, E. Orlova, H. Riemann, V. Shastin
{"title":"光泵浦太赫兹硅激光器","authors":"S. Pavlov, H. Hubers, R. Zhukavin, E. Orlova, H. Riemann, V. Shastin","doi":"10.1109/THZ.2002.1037599","DOIUrl":null,"url":null,"abstract":"Photoexcitation of shallow impurity centers in silicon at low temperatures (<10 K) yields stimulated emission from intra-center optical transitions in the terahertz range. The population inversion mechanisms are based on the peculiarities of electron-phonon interaction, leading to the existence of either a relatively long-living excited impurity state or a group of unpopulated impurity states.","PeriodicalId":143116,"journal":{"name":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Optically pumped terahertz silicon lasers\",\"authors\":\"S. Pavlov, H. Hubers, R. Zhukavin, E. Orlova, H. Riemann, V. Shastin\",\"doi\":\"10.1109/THZ.2002.1037599\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Photoexcitation of shallow impurity centers in silicon at low temperatures (<10 K) yields stimulated emission from intra-center optical transitions in the terahertz range. The population inversion mechanisms are based on the peculiarities of electron-phonon interaction, leading to the existence of either a relatively long-living excited impurity state or a group of unpopulated impurity states.\",\"PeriodicalId\":143116,\"journal\":{\"name\":\"Proceedings, IEEE Tenth International Conference on Terahertz Electronics\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-11-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings, IEEE Tenth International Conference on Terahertz Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/THZ.2002.1037599\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings, IEEE Tenth International Conference on Terahertz Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/THZ.2002.1037599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photoexcitation of shallow impurity centers in silicon at low temperatures (<10 K) yields stimulated emission from intra-center optical transitions in the terahertz range. The population inversion mechanisms are based on the peculiarities of electron-phonon interaction, leading to the existence of either a relatively long-living excited impurity state or a group of unpopulated impurity states.
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