Effective channel mobility and series resistance extraction for fresh and hot-carrier stressed graded junction MOSFETs using a single device

We present a new measurement technique-the drain current-conductance method (DCCM) to extract the gate-bias dependent effective channel mobility (/spl mu//sub eff/) and series resistances (R/sub s/ and R/sub d/) of drain-engineered MOSFETs. Experimental verification for devices with differing channel lengths and after hot-carrier stresses showed that this technique is accurate and effective. The parameters extracted has provided further insight into the asymmetries of graded junctions, and the damage mechanisms of hot-carrier degraded MOSFETs.