氮化族器件中用于电子阻挡的AlGaN多量子势垒

2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) Pub Date : 2018-11-01 DOI:10.1109/NUSOD.2018.8570261

A. Muhin, M. Guttmann, T. Wernicke, M. Kneissl

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引用次数: 1

摘要

本文研究了AlGaN多量子势垒(mqb)中电子阻滞的增强。对Al0.2Ga0.8N/ gan - mqb的有效势垒高度进行了模拟，以寻找最优的层设计。通过使用严格的优化程序，优化后的MQB与体电子阻挡层(EBL)相比，有效势垒高度增加了120 meV以上。在文献中发现的几乎所有材料参数组合以及高达±10%的层厚度波动中，该值都可以实现。在优化设计的基础上，提出了algan - mqb中有效势垒高度实验测定的样品系列。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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AlGaN multi-quantum barriers for electron blocking in group III-nitride devices

In this paper we investigate the enhancement of electron blocking in AlGaN multi-quantum barriers (MQBs). Simulations of effective barrier height of Al0.2Ga0.8N/GaN-MQBs were performed in order to find optimal layer design. By using a strict optimization procedure the optimized MQB exhibits an increase of the effective barrier height of over 120 meV compared to a bulk electron blocking layer (EBL). This value was achieved for nearly all combinations of material parameters found in literature and for up to ±10 % layer thickness fluctuations. Based on the optimized design a sample series for experimental determination of effective barrier heights in AlGaN-MQBs is proposed.

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2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)

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