{"title":"NiCr熔断器可靠性——一种新方法","authors":"J. Vinson","doi":"10.1109/SOUTHC.1994.498110","DOIUrl":null,"url":null,"abstract":"Presents one technique to apply concurrent engineering in the development of a reliable fuse element in CMOS PROMs. The development required both a new circuit and process design. The five stages presented were used to produce a reliable fuse element that is also manufacturable. The use of these techniques uncovered several limitations in the circuit early enough in the development to be corrected. One reported in this paper was the poor current gain of the fusing bipolar transistor.","PeriodicalId":164672,"journal":{"name":"Conference Record Southcon","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"NiCr fuse reliability-a new approach\",\"authors\":\"J. Vinson\",\"doi\":\"10.1109/SOUTHC.1994.498110\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Presents one technique to apply concurrent engineering in the development of a reliable fuse element in CMOS PROMs. The development required both a new circuit and process design. The five stages presented were used to produce a reliable fuse element that is also manufacturable. The use of these techniques uncovered several limitations in the circuit early enough in the development to be corrected. One reported in this paper was the poor current gain of the fusing bipolar transistor.\",\"PeriodicalId\":164672,\"journal\":{\"name\":\"Conference Record Southcon\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record Southcon\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOUTHC.1994.498110\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record Southcon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOUTHC.1994.498110","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Presents one technique to apply concurrent engineering in the development of a reliable fuse element in CMOS PROMs. The development required both a new circuit and process design. The five stages presented were used to produce a reliable fuse element that is also manufacturable. The use of these techniques uncovered several limitations in the circuit early enough in the development to be corrected. One reported in this paper was the poor current gain of the fusing bipolar transistor.
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