G. Carver, R. D. Moore, K. Trapp, P. Kahora, F. Stevie
{"title":"利用空间分辨光致发光和二次离子质谱法检测InP:Fe的成分不均匀性","authors":"G. Carver, R. D. Moore, K. Trapp, P. Kahora, F. Stevie","doi":"10.1109/ICIPRM.1990.203068","DOIUrl":null,"url":null,"abstract":"Semi-insulating InP wafers for electronic and opto-electronic devices must have spatially uniform resistivities (above 1E7 Omega -cm) for high-yield manufacture. Spatially resolved photoluminescence scans have revealed localized regions of high luminescent efficiency in liquid-encapsulated-Czochralski InP:Fe obtained from two commercial suppliers. These bright spots have dimensions in the micron range, and a density approaching 1E5/cm/sup 2/. Secondary ion mass spectroscopy has shown that the spots contain silicon and iron contaminants. The silicon concentration exceeds 1E20/cm/sup 3/, whereas the iron concentration is 100 times below that of the silicon. A resistivity below 1 Omega -cm would be expected near the spots. These features may generate parasitic capacitance that could affect the yield of integrated circuits and opto-electronic arrays.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Detection of compositional non-uniformities in InP:Fe via spatially resolved photoluminescence and secondary ion mass spectrometry\",\"authors\":\"G. Carver, R. D. Moore, K. Trapp, P. Kahora, F. Stevie\",\"doi\":\"10.1109/ICIPRM.1990.203068\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Semi-insulating InP wafers for electronic and opto-electronic devices must have spatially uniform resistivities (above 1E7 Omega -cm) for high-yield manufacture. Spatially resolved photoluminescence scans have revealed localized regions of high luminescent efficiency in liquid-encapsulated-Czochralski InP:Fe obtained from two commercial suppliers. These bright spots have dimensions in the micron range, and a density approaching 1E5/cm/sup 2/. Secondary ion mass spectroscopy has shown that the spots contain silicon and iron contaminants. The silicon concentration exceeds 1E20/cm/sup 3/, whereas the iron concentration is 100 times below that of the silicon. A resistivity below 1 Omega -cm would be expected near the spots. These features may generate parasitic capacitance that could affect the yield of integrated circuits and opto-electronic arrays.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203068\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203068","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Detection of compositional non-uniformities in InP:Fe via spatially resolved photoluminescence and secondary ion mass spectrometry
Semi-insulating InP wafers for electronic and opto-electronic devices must have spatially uniform resistivities (above 1E7 Omega -cm) for high-yield manufacture. Spatially resolved photoluminescence scans have revealed localized regions of high luminescent efficiency in liquid-encapsulated-Czochralski InP:Fe obtained from two commercial suppliers. These bright spots have dimensions in the micron range, and a density approaching 1E5/cm/sup 2/. Secondary ion mass spectroscopy has shown that the spots contain silicon and iron contaminants. The silicon concentration exceeds 1E20/cm/sup 3/, whereas the iron concentration is 100 times below that of the silicon. A resistivity below 1 Omega -cm would be expected near the spots. These features may generate parasitic capacitance that could affect the yield of integrated circuits and opto-electronic arrays.<>
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