J. Kawahara, A. Nakano, N. Kunimi, K. Kinoshita, Y. Hayashi, A. Ishikawa, Y. Seino, T. Ogata, H. Takahashi, Y. Sonoda, T. Yoshino, T. Goto, S. Takada, R. Ichikawa, H. Miyoshi, H. Matsuo, S. Adachi, T. Kikkawa
{"title":"一种新的等离子体增强共聚合(PCP)技术用于增强300mm硅片上低k/Cu有机硅互连的力学性能","authors":"J. Kawahara, A. Nakano, N. Kunimi, K. Kinoshita, Y. Hayashi, A. Ishikawa, Y. Seino, T. Ogata, H. Takahashi, Y. Sonoda, T. Yoshino, T. Goto, S. Takada, R. Ichikawa, H. Miyoshi, H. Matsuo, S. Adachi, T. Kikkawa","doi":"10.1109/IEDM.2003.1269185","DOIUrl":null,"url":null,"abstract":"A new plasma-enhanced co-polymerization (PCP) technology is developed for low-k/Cu damascene integration on 300 mm wafers. The concept of the PCP technology is to introduce monomers, which have different functions such as matrix formation, deposition acceleration, or reinforcement, into a reactor exited with a He-plasma. It is shown that the low-k film growth rate from the matrix monomer such as divinyl siloxane-benzocyclobutene (DVS-BCB) and the elastic modulus of the deposited films are enhanced by adding a deposition acceleration monomer and a reinforcement monomer, respectively, without increasing the k-value. Combining the PCP technology with an ultra-low-pressure CMP technique, the Cu damascene interconnects were successfully fabricated on 300 mm wafers.","PeriodicalId":344286,"journal":{"name":"IEEE International Electron Devices Meeting 2003","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new plasma-enhanced co-polymerization (PCP) technology for reinforcing mechanical properties of organic silica low-k/Cu interconnects on 300 mm wafers\",\"authors\":\"J. Kawahara, A. Nakano, N. Kunimi, K. Kinoshita, Y. Hayashi, A. Ishikawa, Y. Seino, T. Ogata, H. Takahashi, Y. Sonoda, T. Yoshino, T. Goto, S. Takada, R. Ichikawa, H. Miyoshi, H. Matsuo, S. Adachi, T. Kikkawa\",\"doi\":\"10.1109/IEDM.2003.1269185\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new plasma-enhanced co-polymerization (PCP) technology is developed for low-k/Cu damascene integration on 300 mm wafers. The concept of the PCP technology is to introduce monomers, which have different functions such as matrix formation, deposition acceleration, or reinforcement, into a reactor exited with a He-plasma. It is shown that the low-k film growth rate from the matrix monomer such as divinyl siloxane-benzocyclobutene (DVS-BCB) and the elastic modulus of the deposited films are enhanced by adding a deposition acceleration monomer and a reinforcement monomer, respectively, without increasing the k-value. Combining the PCP technology with an ultra-low-pressure CMP technique, the Cu damascene interconnects were successfully fabricated on 300 mm wafers.\",\"PeriodicalId\":344286,\"journal\":{\"name\":\"IEEE International Electron Devices Meeting 2003\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE International Electron Devices Meeting 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2003.1269185\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Electron Devices Meeting 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2003.1269185","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new plasma-enhanced co-polymerization (PCP) technology for reinforcing mechanical properties of organic silica low-k/Cu interconnects on 300 mm wafers
A new plasma-enhanced co-polymerization (PCP) technology is developed for low-k/Cu damascene integration on 300 mm wafers. The concept of the PCP technology is to introduce monomers, which have different functions such as matrix formation, deposition acceleration, or reinforcement, into a reactor exited with a He-plasma. It is shown that the low-k film growth rate from the matrix monomer such as divinyl siloxane-benzocyclobutene (DVS-BCB) and the elastic modulus of the deposited films are enhanced by adding a deposition acceleration monomer and a reinforcement monomer, respectively, without increasing the k-value. Combining the PCP technology with an ultra-low-pressure CMP technique, the Cu damascene interconnects were successfully fabricated on 300 mm wafers.