采用商用SiGe双极工艺制备的紧凑型低相位噪声23ghz压控振荡器

2003 33rd European Microwave Conference, 2003 Pub Date : 2003-10-01 DOI:10.1109/EUMA.2003.341018

T. Hancock, I. Gresham, Gabriel M. Rebeiz

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引用次数: 13

摘要

介绍了一种22.8 GHz差分单片SiGe压控振荡器的设计、实现和测量。该压控振荡器的电源电压为3.5 V，振荡器芯消耗12 mA电流，输出缓冲器消耗22 mA电流。电路面积非常紧凑，占地面积为230平方米× 290平方米。VCO的测量平均输出功率为2.2 dBm，在与载波偏移1mhz时，平均SSB相位噪声为-104 dBc/ Hz。

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Compact Low Phase-Noise 23 GHz VCO Fabricated in a Commercial SiGe Bipolar Process

The design, implementation and measurement of a differential monolithic SiGe VCO at 22.8 GHz is presented. The VCO was designed for a 3.5 V supply voltage with the oscillator core consuming 12 mA of current and the output buffer consuming 22 mA. The circuit area is very compact occupying an area of 230 ¿m x 290 ¿m. The VCO has a measured average output power of 2.2 dBm and an average SSB phase noise of -104 dBc/ Hz at 1 MHz offset from the carrier.

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2003 33rd European Microwave Conference, 2003

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