Ke Xu, Chengdong Wu, Xiaojun Tian, Haibo Yu, Z. Dong
{"title":"单壁碳纳米管场效应晶体管的大规模组装","authors":"Ke Xu, Chengdong Wu, Xiaojun Tian, Haibo Yu, Z. Dong","doi":"10.1109/3M-NANO.2012.6472967","DOIUrl":null,"url":null,"abstract":"This paper is to the assembly and fabrication for typical nano device-SWCNT FET for example, facing the large-scale assembly and fabrication for nano devices, and carrying out the experimental research. Assembly method of SWCNTs FET is by floating potential and dielectrophoresis principle. Six hundred devices were assembled less than per square centimeter. The experimental results showed that large-scale assembly was realized, and the success rate of ideal assembly for SWCNTs FET is achieved.","PeriodicalId":134364,"journal":{"name":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Large-scale assembly of single-walled carbon nanotube field effect transistor\",\"authors\":\"Ke Xu, Chengdong Wu, Xiaojun Tian, Haibo Yu, Z. Dong\",\"doi\":\"10.1109/3M-NANO.2012.6472967\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper is to the assembly and fabrication for typical nano device-SWCNT FET for example, facing the large-scale assembly and fabrication for nano devices, and carrying out the experimental research. Assembly method of SWCNTs FET is by floating potential and dielectrophoresis principle. Six hundred devices were assembled less than per square centimeter. The experimental results showed that large-scale assembly was realized, and the success rate of ideal assembly for SWCNTs FET is achieved.\",\"PeriodicalId\":134364,\"journal\":{\"name\":\"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/3M-NANO.2012.6472967\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/3M-NANO.2012.6472967","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Large-scale assembly of single-walled carbon nanotube field effect transistor
This paper is to the assembly and fabrication for typical nano device-SWCNT FET for example, facing the large-scale assembly and fabrication for nano devices, and carrying out the experimental research. Assembly method of SWCNTs FET is by floating potential and dielectrophoresis principle. Six hundred devices were assembled less than per square centimeter. The experimental results showed that large-scale assembly was realized, and the success rate of ideal assembly for SWCNTs FET is achieved.