柱状纳米结构InGaN在多孔阳极氧化铝Si上的外延生长

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" Pub Date : 2010-11-11 DOI:10.1109/CRMICO.2010.5632749

G. Gorokh, V. Osinsky, D. Solovey, V. Labunov, D. Mazunov, V. Sakharuk

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引用次数: 0

摘要

研究了在n型硅上阳极氧化al膜形成无阻挡层的规则PAA的方法。用MO - VPE在改性paa模板中选择性生长半导体ingan结构。形成的自组织纳米结构InGaN具有非极性α-取向。进行了发光特性的研究和光谱特性的分析。

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Epitaxial growth of column-like nanostructures InGaN on Si in poromeric anodic alumina

Method of formation of regular PAA without a barrier layer in the process of anodizing of Al-film on n-type Si has been developed. Semiconductor InGaN-structures were selectively grown in modified PAA-template by MO VPE. Formed self-organized nanostructures InGaN have nonpolar crystallographic α-orientation. Investigations of luminescent properties and analysis of the spectral characteristics have been performed.

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2010 20th International Crimean Conference "Microwave & Telecommunication Technology"

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