用于高速运行的硅锗异质双极晶体管

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303063

E. Kasper, A. Gruhle

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引用次数: 2

摘要

异质结构的应用可以克服硅双极结晶体管的高频困境(只有在高基片电阻率的情况下才能实现有限的高频工作)。在第一部分中，我们概述了SiGe基极异质双极晶体管(SiGe- hbt)的概念和迄今为止实现的器件。在第二部分，我们报告了基于Si-MBE生长结构的SiGe-HBT器件的工作。实验结果包括传输频率高达100 GHz，最大振荡频率高达65 GHz，基片电阻率低(0.7 k/spl ω /spl平方/至3k /spl ω /spl平方/)，噪声特性良好(>)

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Silicon germanium heterobipolar transistor for high speed operation

The high frequency dilemma (limited high frequency operation only possible with high base sheet resistivities) of silicon bipolar junction transistors can be overcome by the application of heterostructures. In a first part we give an overview about the SiGe base heterobipolar-transistor (SiGe-HBT) concept and about the devices realized so far. In the second part we report about our SiGe-HBT device work based on Si-MBE grown structures. Experimental results obtained include transit frequencies up to 100 GHz, maximum oscillation frequencies up to 65 GHz, low base sheet resistivities (0.7 k/spl Omega/spl square/ to 3 k/spl Omega/spl square/), encouraging noise properties (<2 dB at 10 GHz) and successful tests in 24 GHz oscillators.<>

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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