35毫米胶片格式CMOS图像传感器，用于相机背面应用

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI:10.1109/ISSCC.2002.992932

J. Hurwitz, M. Panaghiston, K. Findlater, R. Henderson, T. Bailey, A. Holmes, B. Paisley

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引用次数: 7

摘要

采用0.5 μm 2-聚金属(2P3M)技术制造的5 V 1120×1808像素35 mm胶片格式CMOS后置图像传感器，包括采用非破坏性像素读取的集成光检测电路，功耗<50 μW。大幅面采用十字线拼接。动态范围为66 dB，峰值信噪比为55 dB。

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A 35 mm film format CMOS image sensor for camera-back applications

A 5 V 1120×1808 pixel 35 mm film format CMOS image sensor for camera-back use, fabricated in 0.5 μm 2-poly 3-metal (2P3M) technology, includes integrated light-detection circuitry using non-destructive pixel read and consumes <50 μW. Reticle stitching is employed for the large format. Dynamic range is 66 dB and peak SNR is 55 dB.

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2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)

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