具有GaAs双栅mesfet的移相器

ESSCIRC 80: 6th European Solid State Circuits Conference Pub Date : 1980-09-01 DOI:10.1109/ESSCIRC.1980.5468775

C. Tsironis, P. Harrop

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引用次数: 3

摘要

在3 GHz到12 GHz的频率范围内实现了双栅MESFET移相器。在12 GHz时实现了100°以上的线性相位变化和4 dB的增益，在6 GHz时实现了50°和11 dB的增益。

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Phase Shifters with GaAs Dual Gate MESFETs

Dual gate MESFET phase shifters have been realized in the frequency range of 3 GHz to 12 GHz. Linear phase variation of more than 100° and gain of 4 dB at 12 GHz and 50° with 11 dB gain at 6 GHz have been achieved.

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ESSCIRC 80: 6th European Solid State Circuits Conference

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