{"title":"用新型快速多通道光谱椭偏仪研究SIMOX层和界面","authors":"B. Biasse, J. Stehle","doi":"10.1109/SOSSOI.1990.145757","DOIUrl":null,"url":null,"abstract":"A nondestructive optical technique, spectroscopic ellipsometry (SE), used to control top SiO/sub 2/, silicon, and buried SiO/sub 2/ layer thicknesses, as well as interfaces of these layers during SIMOX (separation by implantation of oxygen) wafer fabrication, is addressed. New improvements on SE give the capability to measure a complete spectrum within 1 s without losing useful information. Using this technique, it is also possible to characterize the evolution of layer thicknesses when the dose of implantation is increased at a given energy. The microspot option reduces the beam size from 3*9 mm/sup 2/ down to 150*150 mu m/sup 2/.<<ETX>>","PeriodicalId":344373,"journal":{"name":"1990 IEEE SOS/SOI Technology Conference. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SIMOX layers and interfaces studies with a new fast multichannel spectroscopic ellipsometer\",\"authors\":\"B. Biasse, J. Stehle\",\"doi\":\"10.1109/SOSSOI.1990.145757\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A nondestructive optical technique, spectroscopic ellipsometry (SE), used to control top SiO/sub 2/, silicon, and buried SiO/sub 2/ layer thicknesses, as well as interfaces of these layers during SIMOX (separation by implantation of oxygen) wafer fabrication, is addressed. New improvements on SE give the capability to measure a complete spectrum within 1 s without losing useful information. Using this technique, it is also possible to characterize the evolution of layer thicknesses when the dose of implantation is increased at a given energy. The microspot option reduces the beam size from 3*9 mm/sup 2/ down to 150*150 mu m/sup 2/.<<ETX>>\",\"PeriodicalId\":344373,\"journal\":{\"name\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1990 IEEE SOS/SOI Technology Conference. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOSSOI.1990.145757\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1990 IEEE SOS/SOI Technology Conference. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOSSOI.1990.145757","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SIMOX layers and interfaces studies with a new fast multichannel spectroscopic ellipsometer
A nondestructive optical technique, spectroscopic ellipsometry (SE), used to control top SiO/sub 2/, silicon, and buried SiO/sub 2/ layer thicknesses, as well as interfaces of these layers during SIMOX (separation by implantation of oxygen) wafer fabrication, is addressed. New improvements on SE give the capability to measure a complete spectrum within 1 s without losing useful information. Using this technique, it is also possible to characterize the evolution of layer thicknesses when the dose of implantation is increased at a given energy. The microspot option reduces the beam size from 3*9 mm/sup 2/ down to 150*150 mu m/sup 2/.<>
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