硅片表面活性剂的厚度决定了TMAH溶液的蚀刻性能

B. Tang, M. Gosálvez, P. Pal, S. Itoh, H. Hida, M. Shikida, Kazuo Sato
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引用次数: 5

摘要

本文的目的是研究TMAH溶液湿法各向异性刻蚀过程中不同表面活性剂厚度对刻蚀性能的影响。利用椭圆偏振光谱(SE)研究了表面活性剂分子在Si{110}和Si{100}表面的优先吸附厚度。TMAH中蚀刻速率和表面粗糙度随层厚的变化关系表明,表面活性剂在TMAH+Triton中蚀刻时被吸附在界面上。薄的预吸附层足以显著改善硅的蚀刻特性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Adsorbed surfactant thickness on: A Si wafer dominating etching properties of TMAH solution
The goal of this article is to study the etching properties as a function of various adsorbed surfactant thickness in wet anisotropic etching process of TMAH solution. The thickness of preferentially adsorbed surfactant molecules on Si{110} and Si{100} has been evaluated by using spectroscopic ellipsometry (SE). The dependence of the etch rate in TMAH and the surface roughness on the layer thickness demonstrates that the surfactant is adsorbed at the interface during etching in TMAH+Triton. A thin pre-adsorbed layer is sufficient to dramatically improve the etching characteristics of silicon.
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