{"title":"动力包的循环载荷和疲劳","authors":"T. Hauck","doi":"10.1109/ESIME.2011.5765815","DOIUrl":null,"url":null,"abstract":"The author studied the behavior of power packages exposed to repeatedly high current loads. Self-heating of the power transistors can cause a tremendous temperature rise in the vicinity of the active device. The resulting temperature gradient and the thermal mismatch of materials induce mechanical strains and stresses in the power package. The stress level can in some cases exceed the yield limit of the metallization layer on the die. Repetitive current peaks will then cause a fatigue phenomenon that can cause a device failure.","PeriodicalId":115489,"journal":{"name":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Cyclic loading and fatigue in power packages\",\"authors\":\"T. Hauck\",\"doi\":\"10.1109/ESIME.2011.5765815\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The author studied the behavior of power packages exposed to repeatedly high current loads. Self-heating of the power transistors can cause a tremendous temperature rise in the vicinity of the active device. The resulting temperature gradient and the thermal mismatch of materials induce mechanical strains and stresses in the power package. The stress level can in some cases exceed the yield limit of the metallization layer on the die. Repetitive current peaks will then cause a fatigue phenomenon that can cause a device failure.\",\"PeriodicalId\":115489,\"journal\":{\"name\":\"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESIME.2011.5765815\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 12th Intl. Conf. on Thermal, Mechanical & Multi-Physics Simulation and Experiments in Microelectronics and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESIME.2011.5765815","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The author studied the behavior of power packages exposed to repeatedly high current loads. Self-heating of the power transistors can cause a tremendous temperature rise in the vicinity of the active device. The resulting temperature gradient and the thermal mismatch of materials induce mechanical strains and stresses in the power package. The stress level can in some cases exceed the yield limit of the metallization layer on the die. Repetitive current peaks will then cause a fatigue phenomenon that can cause a device failure.