90nm大块BiCDMOS平台技术，15-80V ld - mosfet，适用于汽车应用

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988896

H. Fujii, S. Tokumitsu, T. Mori, T. Yamashita, T. Maruyama, T. Maruyama, Y. Maruyama, Shigeki Nishimoto, Hiroyuki Arie, Shunji Kubo, T. Ipposhi

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引用次数: 10

摘要

本文提出了一种用于汽车应用的90nm大块BiCDMOS平台。在该平台中，介绍了两种典型的深沟隔震。一个有一个从上到下的气隙，作为一个稳定的高压隔离器。另一个有钨插头，不仅减少面积和基板接地的阻力，而且还减少了噪声阻断主动屏障保护环。对于Neh LD-MOSFET，插入了一个强化p型区域，以抵消少量热处理带来的电场增强。先进的90nm规则主要应用于缩小芯片尺寸的逻辑领域。该平台还提供模拟友好型器件，如高压bjt、全隔离二极管和eFlash。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 90nm bulk BiCDMOS platform technology with 15–80V LD-MOSFETs for automotive applications

This paper proposes a 90nm bulk BiCDMOS platform for automotive applications. In this platform, two types of characteristic deep trench isolations are introduced. One has a top-to-bottom air-gap which serves as a stable isolator against high voltage. Another has a tungsten plug which not only minimizes area and resistance for substrate grounding but also slims down a noise-blocking active barrier guard-ring. For an Neh LD-MOSFET, a resurf-enforcing p-type region is inserted to cancel the electric field intensification brought by little thermal treatment. The advanced 90nm rule is mainly applied to a logic area for chip-size reduction. This platform also provides analog-friendly devices such as HV BJTs, full-isolation diode and eFlash.

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来源期刊

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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