脉冲放大器回转速率对GaN hemt脉冲测量的影响

S. Albahrani, A. Parker
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引用次数: 0

摘要

利用新的陷阱和自热模型研究了脉冲放大器的非理想响应对GaN HEMT中陷阱和自热动力学的影响,从而对漏极电流瞬态的影响。研究表明,由于脉冲放大器的非理想响应,陷阱和自热动力学的研究需要一种适当的校正技术来考虑陷阱电位、陷阱时间常数和热响应的变化。讨论了几种测量后数据校正技术,并证明它们无法预测漏极电流的真实暂态。为了解决这一问题,采用了一种基于新型脉冲测量系统的预测量终端校正技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Impact of the pulse-amplifier slew-rate on the pulsed-IV measurement of GaN HEMTs
The influence of the non-ideal response of the pulse-amplifier on the trap and self-heating dynamics, and hence, on the drain-current transient in a GaN HEMT is studied with new trap and self-heating models. It is shown that the study of the trap and self-heating dynamics requires a proper correction technique that accounts for the change in trap-potential, trap time-constant and thermal response due to the non-ideal response of the pulse-amplifier. Several post-measurement data correction techniques are discussed and shown to be incapable of predicting the true drain-current transient. A pre-measurement terminal correction technique using a new version of the pulse measurement system is used to solve the problem.
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