基于0.18 um CMOS技术的差动有源电感设计与仿真

2011 IEEE International Conference on System Engineering and Technology Pub Date : 2011-06-27 DOI:10.1109/ICSENGT.2011.5993414

Komeil Rasouli, Akram Nouri, M. Sabaghi, A. M. Kordalivand, Mahmoud Azmodeh Far

{"title":"基于0.18 um CMOS技术的差动有源电感设计与仿真","authors":"Komeil Rasouli, Akram Nouri, M. Sabaghi, A. M. Kordalivand, Mahmoud Azmodeh Far","doi":"10.1109/ICSENGT.2011.5993414","DOIUrl":null,"url":null,"abstract":"In this paper we present differential active inductor in CMOS technology. The supply voltage for this circuit is 1.8V. A self resonant frequency of 5GHz is obtained. The range of sweep for inductance (L) achieved from 1nH up to 70nH. In this design we used 0.18um RFCOMS transistor and Advanced Design system (ADS) for Design and simulation circuits.","PeriodicalId":346890,"journal":{"name":"2011 IEEE International Conference on System Engineering and Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Design and simulation of differential active inductor with 0.18 um CMOS Technology\",\"authors\":\"Komeil Rasouli, Akram Nouri, M. Sabaghi, A. M. Kordalivand, Mahmoud Azmodeh Far\",\"doi\":\"10.1109/ICSENGT.2011.5993414\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present differential active inductor in CMOS technology. The supply voltage for this circuit is 1.8V. A self resonant frequency of 5GHz is obtained. The range of sweep for inductance (L) achieved from 1nH up to 70nH. In this design we used 0.18um RFCOMS transistor and Advanced Design system (ADS) for Design and simulation circuits.\",\"PeriodicalId\":346890,\"journal\":{\"name\":\"2011 IEEE International Conference on System Engineering and Technology\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE International Conference on System Engineering and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSENGT.2011.5993414\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE International Conference on System Engineering and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENGT.2011.5993414","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文介绍了一种基于CMOS技术的差动有源电感器。这个电路的供电电压是1.8V。得到了5GHz的自谐振频率。电感(L)的扫频范围从1nH到70nH。在本设计中，我们使用0.18um RFCOMS晶体管和高级设计系统(ADS)进行电路的设计和仿真。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design and simulation of differential active inductor with 0.18 um CMOS Technology

In this paper we present differential active inductor in CMOS technology. The supply voltage for this circuit is 1.8V. A self resonant frequency of 5GHz is obtained. The range of sweep for inductance (L) achieved from 1nH up to 70nH. In this design we used 0.18um RFCOMS transistor and Advanced Design system (ADS) for Design and simulation circuits.

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2011 IEEE International Conference on System Engineering and Technology

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