硅基上生长的高效率、高增益、高饱和输出功率量子点soa及其应用

2020 Optical Fiber Communications Conference and Exhibition (OFC) Pub Date : 2020-03-01 DOI:10.1364/ofc.2020.t4h.3

Songtao Liu, Y. Tong, J. Norman, M. Dumont, A. Gossard, H. Tsang, J. Bowers

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引用次数: 7

摘要

在CMOS兼容的Si衬底上直接生长的高性能量子点半导体光放大器，在温度为20°C至60°C的无滤波器60 gbit /s NRZ传输系统中提高了接收器灵敏度。

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High Efficiency, High Gain and High Saturation Output Power Quantum Dot SOAs Grown on Si and Applications

A high-performance quantum dot semiconductor optical amplifier directly grown on a CMOS compatible Si substrate is demonstrated to improve the receiver sensitivity in a filterless 60-Gbit/s NRZ transmission system over temperatures from 20°C to 60°C.

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来源期刊

2020 Optical Fiber Communications Conference and Exhibition (OFC)

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