改进型双向准z源逆变器控制策略研究

Huang-Chih Lin, Wei Liang, Lan Zhu, Zhen Cheng, Y. Zheng
{"title":"改进型双向准z源逆变器控制策略研究","authors":"Huang-Chih Lin, Wei Liang, Lan Zhu, Zhen Cheng, Y. Zheng","doi":"10.1109/ICESIT53460.2021.9696744","DOIUrl":null,"url":null,"abstract":"In order to make the switched-inductor Quasi-Z source inverter have the function of energy bidirectional flowing in some special occasions, the diode in the topology is changed to insulation gate bipolar transistor (IGBT). The influence of capacitance and inductance parameters on zero and pole of bidirectional switched-inductor Quasi-Z source inverter is analyzed by using small signal model. The simulation of SVPWM4 based on shoot-through vector insert is finished.","PeriodicalId":164745,"journal":{"name":"2021 IEEE International Conference on Emergency Science and Information Technology (ICESIT)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Research on Control Strategy of Improved Bidirectional Quasi-Z Source Inverter\",\"authors\":\"Huang-Chih Lin, Wei Liang, Lan Zhu, Zhen Cheng, Y. Zheng\",\"doi\":\"10.1109/ICESIT53460.2021.9696744\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order to make the switched-inductor Quasi-Z source inverter have the function of energy bidirectional flowing in some special occasions, the diode in the topology is changed to insulation gate bipolar transistor (IGBT). The influence of capacitance and inductance parameters on zero and pole of bidirectional switched-inductor Quasi-Z source inverter is analyzed by using small signal model. The simulation of SVPWM4 based on shoot-through vector insert is finished.\",\"PeriodicalId\":164745,\"journal\":{\"name\":\"2021 IEEE International Conference on Emergency Science and Information Technology (ICESIT)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-11-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Conference on Emergency Science and Information Technology (ICESIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICESIT53460.2021.9696744\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Conference on Emergency Science and Information Technology (ICESIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICESIT53460.2021.9696744","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

为了使开关电感准z源逆变器在某些特殊场合具有能量双向流动的功能,将拓扑结构中的二极管改为绝缘栅双极晶体管(IGBT)。采用小信号模型分析了电容和电感参数对双向开关电感准z源逆变器零极的影响。完成了基于贯通矢量插入的SVPWM4的仿真。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Research on Control Strategy of Improved Bidirectional Quasi-Z Source Inverter
In order to make the switched-inductor Quasi-Z source inverter have the function of energy bidirectional flowing in some special occasions, the diode in the topology is changed to insulation gate bipolar transistor (IGBT). The influence of capacitance and inductance parameters on zero and pole of bidirectional switched-inductor Quasi-Z source inverter is analyzed by using small signal model. The simulation of SVPWM4 based on shoot-through vector insert is finished.
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