多晶体管MTCMOS方法的低功耗移位寄存器仿真

Puvanaah Manokaran, A. Zainuddin
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引用次数: 3

摘要

大积分的方法涉及到在一个极其紧凑的空间内实现一个显著的晶体管数目。组合逻辑已被证明在量子计算以及其他设计应用中特别有效。在VLSI设计中,主要目标是降低功耗和延迟。为了建立技术和支持电机使用的增加,减少大应变的亚阈值电流是至关重要的。本研究探讨了实现移位寄存器而不使用多阈值CMOS (MTCMOS)方法的可行性。在0.18µm、0.12µm和90 nm工艺下,对各种触发器的功耗和传输延迟特性进行了研究。随着技术的萎缩,泄漏造成的电力损失也在增加。使用所有运行时策略中最好的技术,即MTCMOS,有助于限制由于泄漏造成的功率损失。本文的目的是利用Microwind模拟器获得的结果,对各种传统触发器和TSPC触发器在功耗、扩散延迟、延迟功率积(PDP)、面积和功率流方面进行比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simulation of Low-Power Shift Registers Using the MTCMOS Method with a Wide Selection of Transistors
The method of huge integrating involves implementing a significant transistor count in an extremely condensed space. Combinatorial logic has shown to be particularly effective in quantum computing as well as other designing applications. In VLSI design, the primary goal is to cut down on power consumption as well as latency. For the purpose of establishing technology and supporting the increased use of electrical machines, it is vital to decrease sub-threshold current flowing for large strains. This research explores the feasibility of implementing a shift register and without the Multi-threshold CMOS (MTCMOS) approach. At the process technology of 0.18 µm, 0.12 µm, and 90 nm, an investigation into the power loss and transmission delay characteristics of a variety of flip-flops is carried out. As technology gets shrunk, the amount of power lost through leakage rises. Using the greatest technique among all run time strategies, namely MTCMOS, helps to limit the amount of power lost due to leakage. The purpose of this article is to give a comparison between various traditional flip-flops and the TSPC flip-flop with regard to power usage, diffusion delays, product of delay-power (PDP), area, and power flow using the findings obtained from the Microwind simulator.
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