在SOI后端集成菲涅耳带板，提高了激光与芯片的耦合效率

2017 IEEE Optical Interconnects Conference (OI) Pub Date : 2017-06-01 DOI:10.1109/OIC.2017.7965512

Marvin Henniges, S. Meister, H. Rhee, C. Theiss, H. Robers, M. Grehn, D. Stolarek, L. Zimmermann, U. Woggon

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引用次数: 0

摘要

为了提高椭圆型非垂直光源与光栅耦合器之间的光耦合效率，设计了刻蚀在绝缘体上硅芯片后端的带片。对高度发散光源的测量表明，效率提高了8.7dB。

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Integrated fresnel zone plate in the SOI backend for improved laser to chip coupling efficiency

A zone plate, etched into the backend of a silicon-on-insulator chip, was designed to improve the optical coupling efficiency between grating couplers and non-perpendicular light sources with an elliptical beam profile. Measurements of a highly divergent light source showed efficiency improvements up to 8.7dB.

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2017 IEEE Optical Interconnects Conference (OI)

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