{"title":"用于TID测量的mosfet应用","authors":"Yu. N. Barmakov, V. Butin, A. Butina","doi":"10.1109/SIBIRCON.2017.8109882","DOIUrl":null,"url":null,"abstract":"In this paper a new approach of p-channel MOS-transistors using for total dose monitoring at semiconductor components under radiation is presented. The calibration results enable to determine the numerical parameters for MOSFETs electro-physical model of dose effects. We propose to calculate total dose of ionization flux using the results of MOS-transistors drain current measurements by fixed gate and drain voltage.","PeriodicalId":135870,"journal":{"name":"2017 International Multi-Conference on Engineering, Computer and Information Sciences (SIBIRCON)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"MOSFETs application for TID measurements\",\"authors\":\"Yu. N. Barmakov, V. Butin, A. Butina\",\"doi\":\"10.1109/SIBIRCON.2017.8109882\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a new approach of p-channel MOS-transistors using for total dose monitoring at semiconductor components under radiation is presented. The calibration results enable to determine the numerical parameters for MOSFETs electro-physical model of dose effects. We propose to calculate total dose of ionization flux using the results of MOS-transistors drain current measurements by fixed gate and drain voltage.\",\"PeriodicalId\":135870,\"journal\":{\"name\":\"2017 International Multi-Conference on Engineering, Computer and Information Sciences (SIBIRCON)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 International Multi-Conference on Engineering, Computer and Information Sciences (SIBIRCON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIBIRCON.2017.8109882\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 International Multi-Conference on Engineering, Computer and Information Sciences (SIBIRCON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIBIRCON.2017.8109882","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper a new approach of p-channel MOS-transistors using for total dose monitoring at semiconductor components under radiation is presented. The calibration results enable to determine the numerical parameters for MOSFETs electro-physical model of dose effects. We propose to calculate total dose of ionization flux using the results of MOS-transistors drain current measurements by fixed gate and drain voltage.