低相位噪声k波段CMOS压控振荡器的缺陷接地结构双谐振电路

2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2018-08-01 DOI:10.1109/RFIT.2018.8524088

R. Pokharel, Nusrat Jahan, A. Barakat

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引用次数: 0

摘要

本文分析了三种不同类型的缺陷接地结构(DGS)谐振器的品质因子$(\boldsymbol{Q_{U}}/\boldsymbol{Q_{K}})$，其中包括串联谐振和并联谐振。然后，我们在$0.18\ {\mu} \mathbf{m}$ CMOS技术上实现了高性能k波段压控振荡器，最后介绍了k波段低相位噪声压控振荡器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dual Resonance Circuits by Defected Ground Structure Resonators for Low Phase Noise K-Band CMOS VCO

We analyze the quality factor $(\boldsymbol{Q_{U}}/\boldsymbol{Q_{K}})$ of three different types of defected ground structure (DGS) resonators including a series resonance in addition to the parallel one. Then, we implement the resonators to design high-performance K-band VCOs in $0.18\ {\mu} \mathbf{m}$ CMOS Technology and finally, a low phase noise VCO at K-band is introduced.

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2018 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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