Zhenjie Song, Chun Yang, Zichen Feng, Shaopeng Jia
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Monolithically integrated Schottky diode and UTC-PD module for Microwave transceiver
In this paper, a monolithically integrated Schottky diode and UTC-PD module served as optoelectronic microwave transceiver is proposed. The transceiver can be switched between transmitter and receiver mode by changing the bias voltage of the Schottky diode. TCAD simulation was conducted to study the characteristics of the transceiver. The responsivity of the UTC-PD is 0.38 A/W at 1.55um wavelength. In case of receiver mode, the down conversion loss is 19.8dB at 1GHz which shows a 2dB improvement compared with direct down conversion in a UTC-PD. It is hoped to be scalable to higher frequencies since both the Schottky diode and UTC-PD could operate up to THz.
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