3D整合是一个机会还是只是一种炒作?

Jin-Fu Li, Cheng-Wen Wu
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引用次数: 25

摘要

利用硅通孔(TSV)进行三维集成是一种新兴的集成电路设计技术。3D集成技术为设计人员寻找更具成本效益的系统芯片解决方案提供了许多机会。除了堆叠同质内存芯片外,3D集成技术还支持存储器、逻辑、传感器等的异构集成。它减轻了互连性能限制,提供了更高的功能,实现了小尺寸等。另一方面,在基于tsv的3D集成电路实现量产之前,还需要克服一些挑战,例如技术挑战、良率和测试挑战、热功耗挑战、基础设施挑战等。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Is 3D integration an opportunity or just a hype?
Three-dimensional (3D) integration using through silicon via (TSV) is an emerging technology for integrated circuit designs. 3D integration technology provides numerous opportunities to designers looking for more cost-effective system chip solutions. In addition to stacking homogeneous memory dies, 3D integration technology supports heterogeneous integration of memories, logic, sensors, etc. It eases the interconnect performance limitation, provides higher functionality, results in small form factor, etc. On the other hand, there are challenges that should be overcome before volume production of TSV-based 3D ICs becomes possible, e.g., technological challenges, yield and test challenges, thermal and power challenges, infrastructure challenges, etc.
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