用于泵浦的200w InGaAlAs/GaAs二极管激光棒

B. Acklin, M. Behringer, G. Herrmann, J. Luft, C. Hanke, L. Korte, M. Marchiano, J. Wilhelmi, B. De Odorico
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引用次数: 1

摘要

固体激光泵浦是高功率半导体激光器的一个重要应用。与闪光灯相比,激光二极管具有更高的电光转换效率(50%)和更窄的光谱发射(2 - 5nm),可以实现更高效的泵浦,从而使固态激光器具有优越的热学和光学性能。使用近20年前提出的一种有前途的方法,我们称之为“微堆栈激光器”,可以进一步提高性能,从而降低价格,特别是对于脉冲和qcw操作。它是将多个主动激光结垂直集成在一个结构中,利用简并掺杂隧道结电连接中间的反向结。通过以这种方式堆叠2到4个发射器,半导体激光器的输出功率理论上可以增加2到4倍,因为可靠的输出功率主要受激光切面的功率密度限制。现代生长技术可以提供所需的10至20微米厚的高质量外延层。限制因素源于额外的电阻和热阻,以及电流向更深的结扩散。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
200-W InGaAlAs/GaAs diode laser bars for pumping
Solid state laser pumping is an important application for high power semiconductor lasers. The higher electro-optical conversion efficiency (50%), and narrower spectral emission (2 - 5 nm) of laser diodes allow for more efficient pumping compared to flash lamps, and consequently lead to superior thermal and optical properties of the solid state laser. A further performance increase and thus price reduction, especially for pulsed and qcw operation, is conceivable using a promising approach proposed almost 20 years ago which we dubbed 'micro-stack lasers.' It consists in vertically integrating multiple active laser junctions in one -- structure using degenerately doped tunnel junctions to electrically connect the intermediate reverse junctions. By stacking 2 to 4 emitters in this way, the output power of semiconductor lasers could theoretically be increased by a factor of 2 to 4 as the reliable output power is mainly limited by the power density at the laser facets. Modern growth technology can provide the necessary 10 to 20 micrometer thick high quality epitaxial layers. The limiting factors rather originate from the additional electrical and thermal resistance, and from current spreading towards the deeper junctions.
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