低功耗垂直GaN SGT-MOSFET的优化

2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Pub Date : 2020-09-23 DOI:10.1109/WiPDAAsia49671.2020.9360257

N. Jaiswal, V. N. Ramakrishnan, Sukhendu deb Roy

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引用次数: 2

摘要

我们提出了一种新的600 V击穿优化的垂直GaN分栅沟槽功率MOSFET (SGTMOSFET)器件，具有显着降低的比导通电阻和更低的反向电容。使用TCAD数值模拟，我们证明了与具有相似击穿电压的传统TG-MOSFET相比，SGTMOSFET的比导通电阻降低了约30%，反向电容降低了约5倍。

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Optimization of Vertical GaN SGT-MOSFET for Low Ron

We present a new 600 V breakdown optimized vertical GaN Split-Gate Trench power MOSFET (SGTMOSFET) device with significantly reduced specific on-resistance and lower reverse capacitance. Using TCAD numerical simulations, we demonstrate that the SGTMOSFET exhibits about 30% lower specific on-resistance and about five times reduction in the reverse capacitance when compared to a conventional TG-MOSFET with similar breakdown voltage.

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2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)

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