在电子和传感器应用中集成碳纳米管的晶圆级方法

S. Hermann, H. Fiedler, Y. Haibo, Sergei Loschek, J. Bonitz, S. Schulz, T. Gessner
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引用次数: 5

摘要

本文综述了近年来碳纳米管集成技术的研究进展。我们专注于用CVD和DEP方法生长和沉积碳纳米管的晶圆级方法。因此,我们提出了在热CVD过程中控制碳纳米管生长结构、生长模式以及生长抑制的方法。独特的增长结构为碳纳米管集成开辟了新的可能性,突出了这一点。同样,我们展示了在晶圆级上扩大DEP方法的最新进展。最后,我们制作了碳纳米管过孔和包含碳纳米管传感器元件的MEMS结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer level approaches for the integration of carbon nanotubes in electronic and sensor applications
In this work we give an overview about recent developments in the integration technology of CNTs. We focus on wafer level approaches with the CVD and DEP method for growing as well as depositing CNTs in a defined way. So that we present methods to manipulate CNT growth structure, growth mode as well as growth inhibition in thermal CVD processes. This is highlighted by a unique growth structure opening new possibilities for CNT integration. Likewise, we show recent developments in scaling up the DEP method on wafer level. We round it up with the fabrication of CNT vias and MEMS structures containing CNT sensor elements.
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