M. Faur, M. Faur, D. Flood, D. Brinker, C. Goradia, S. Bailey, I. Weinberg, M. Goradia, D. Jayne, J. Moulot, N. Fatemi
{"title":"化学氧化法制备InP太阳能电池的有效第一层抗反射涂层","authors":"M. Faur, M. Faur, D. Flood, D. Brinker, C. Goradia, S. Bailey, I. Weinberg, M. Goradia, D. Jayne, J. Moulot, N. Fatemi","doi":"10.1109/ICIPRM.1994.328273","DOIUrl":null,"url":null,"abstract":"Commonly used first layer antireflection (AR) coatings for InP solar cells, such as ZnS, Sb/sub 2/O/sub 3/, SiO/sub 2/ and SiO, deposited either by electron-beam or by resistive evaporation, destroy the stoichiometry of the emitter surface. Consequently, the surface recombination velocity (SRV) at the emitter surface is significantly increased, leading to a reduction in the values of solar cell performance parameters. This can be prevented by growing, after contacting, a thin native oxide layer on the emitter surface. Best results are obtained using a phosphorus-rich chemical oxide grown by chemical oxidation using a newly developed etchant (PNP) based on HNO/sub 3/, o-H/sub 3/PO/sub 4/ and H/sub 2/O/sub 2/. The chemical oxide grown on p/sup +/-InP emitters, using the PNP etchant, passivates the surface and can be used as a first layer AR coating.<<ETX>>","PeriodicalId":161711,"journal":{"name":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Effective first layer antireflective coating on InP solar cells grown by chemical oxidation\",\"authors\":\"M. Faur, M. Faur, D. Flood, D. Brinker, C. Goradia, S. Bailey, I. Weinberg, M. Goradia, D. Jayne, J. Moulot, N. Fatemi\",\"doi\":\"10.1109/ICIPRM.1994.328273\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Commonly used first layer antireflection (AR) coatings for InP solar cells, such as ZnS, Sb/sub 2/O/sub 3/, SiO/sub 2/ and SiO, deposited either by electron-beam or by resistive evaporation, destroy the stoichiometry of the emitter surface. Consequently, the surface recombination velocity (SRV) at the emitter surface is significantly increased, leading to a reduction in the values of solar cell performance parameters. This can be prevented by growing, after contacting, a thin native oxide layer on the emitter surface. Best results are obtained using a phosphorus-rich chemical oxide grown by chemical oxidation using a newly developed etchant (PNP) based on HNO/sub 3/, o-H/sub 3/PO/sub 4/ and H/sub 2/O/sub 2/. The chemical oxide grown on p/sup +/-InP emitters, using the PNP etchant, passivates the surface and can be used as a first layer AR coating.<<ETX>>\",\"PeriodicalId\":161711,\"journal\":{\"name\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-03-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1994.328273\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1994.328273","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effective first layer antireflective coating on InP solar cells grown by chemical oxidation
Commonly used first layer antireflection (AR) coatings for InP solar cells, such as ZnS, Sb/sub 2/O/sub 3/, SiO/sub 2/ and SiO, deposited either by electron-beam or by resistive evaporation, destroy the stoichiometry of the emitter surface. Consequently, the surface recombination velocity (SRV) at the emitter surface is significantly increased, leading to a reduction in the values of solar cell performance parameters. This can be prevented by growing, after contacting, a thin native oxide layer on the emitter surface. Best results are obtained using a phosphorus-rich chemical oxide grown by chemical oxidation using a newly developed etchant (PNP) based on HNO/sub 3/, o-H/sub 3/PO/sub 4/ and H/sub 2/O/sub 2/. The chemical oxide grown on p/sup +/-InP emitters, using the PNP etchant, passivates the surface and can be used as a first layer AR coating.<>
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