N. Takaura, T. Ohyanagi, M. Tai, T. Morikawa, M. Kinoshita, K. Akita
{"title":"拓扑开关RAM (TRAM)的制备","authors":"N. Takaura, T. Ohyanagi, M. Tai, T. Morikawa, M. Kinoshita, K. Akita","doi":"10.1109/NVMTS.2014.7060835","DOIUrl":null,"url":null,"abstract":"The fabrication of topological-switching random-access memory (TRAM), a new type of phase change memory, was investigated. The deposition and etching process technologies of a GeTe/Sb2Te3 superlattice memory cell were developed and micro test structures of TRAM were fabricated. Analysis of the fabricated structures revealed that the electrical properties of TRAM were different from those of conventional phase change memory and the reset voltage of TRAM, 0.6 V, was less than that of PRAM, 1 V. The non-melting behaviors of resistance change in TRAM were clarified via thermal-conductivity measurements and device simulation.","PeriodicalId":275170,"journal":{"name":"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Fabrication of topological-switching RAM (TRAM)\",\"authors\":\"N. Takaura, T. Ohyanagi, M. Tai, T. Morikawa, M. Kinoshita, K. Akita\",\"doi\":\"10.1109/NVMTS.2014.7060835\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The fabrication of topological-switching random-access memory (TRAM), a new type of phase change memory, was investigated. The deposition and etching process technologies of a GeTe/Sb2Te3 superlattice memory cell were developed and micro test structures of TRAM were fabricated. Analysis of the fabricated structures revealed that the electrical properties of TRAM were different from those of conventional phase change memory and the reset voltage of TRAM, 0.6 V, was less than that of PRAM, 1 V. The non-melting behaviors of resistance change in TRAM were clarified via thermal-conductivity measurements and device simulation.\",\"PeriodicalId\":275170,\"journal\":{\"name\":\"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NVMTS.2014.7060835\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NVMTS.2014.7060835","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The fabrication of topological-switching random-access memory (TRAM), a new type of phase change memory, was investigated. The deposition and etching process technologies of a GeTe/Sb2Te3 superlattice memory cell were developed and micro test structures of TRAM were fabricated. Analysis of the fabricated structures revealed that the electrical properties of TRAM were different from those of conventional phase change memory and the reset voltage of TRAM, 0.6 V, was less than that of PRAM, 1 V. The non-melting behaviors of resistance change in TRAM were clarified via thermal-conductivity measurements and device simulation.
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