利用提取的BSIM3v3 MOS参数进行弱反转电路的快速设计

Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004. Pub Date : 2004-12-06 DOI:10.1109/ICM.2004.1434212

L. de Carvalho Ferreira, T. Pimenta

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引用次数: 1

摘要

本文描述了一种从BSIM3v3模型中提取弱反演MOS晶体管直流参数的方法。确定了人工计算的最优模型后，用最小二乘法求出参数。结果表明，与BSIM3v3相比，该方法对I / V关系的判定指标为r/sup 3/，提高了晶体管尺寸计算的精度，是最坏情况下的99.31%。

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The use of extracted BSIM3v3 MOS parameters for fast design of circuits on weak inversion

This work describes a methodology for the extraction of DC parameters of MOS transistors on weak inversion from BSIM3v3 model. Once the optimum model for manual calculations has been defined, the parameters are obtained using the minimum square method. The results show that the proposed method improves the precision of the transistors 'dimensions' calculations, by giving a determination index r/sup 3/ to the I vs V relation, which is 99.31% of the worst case, when compared to the BSIM3v3.

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Proceedings. The 16th International Conference on Microelectronics, 2004. ICM 2004.

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