分子束外延和金属有机气相外延生长GaAs/AlGaAs量子阱红外探测器的比较研究

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791659

M. Johnston, L. Dao, M. Gal, N. Lumpkin, R. G. Clark, F. Lan, H. Tan, C. Jagadish, Nanxi Li, Zhanghai Chen, Xingquan Liu, Ning Li, W. Lu, S. Shen

{"title":"分子束外延和金属有机气相外延生长GaAs/AlGaAs量子阱红外探测器的比较研究","authors":"M. Johnston, L. Dao, M. Gal, N. Lumpkin, R. G. Clark, F. Lan, H. Tan, C. Jagadish, Nanxi Li, Zhanghai Chen, Xingquan Liu, Ning Li, W. Lu, S. Shen","doi":"10.1109/COMMAD.1998.791659","DOIUrl":null,"url":null,"abstract":"Quantum well infrared photodetector (QWIP) structures were grown by metal organic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). These n-type QWIP structures were fabricated into devices. Inter-subband and inter-band transition energies were measured using photoresponse and photoluminescence spectroscopy. The carrier dynamics of one of the structures was analysed using temperature dependent up-conversion spectroscopy. These results were modelled with the solution of a three level system. Measurement of an n-type QWIP allows us to determine the inter-subband relaxation time of a p-type QWIP. The intersubband relaxation time of a p-type QWIP with 3 nm wide wells was determined to be 15 ps.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy\",\"authors\":\"M. Johnston, L. Dao, M. Gal, N. Lumpkin, R. G. Clark, F. Lan, H. Tan, C. Jagadish, Nanxi Li, Zhanghai Chen, Xingquan Liu, Ning Li, W. Lu, S. Shen\",\"doi\":\"10.1109/COMMAD.1998.791659\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Quantum well infrared photodetector (QWIP) structures were grown by metal organic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). These n-type QWIP structures were fabricated into devices. Inter-subband and inter-band transition energies were measured using photoresponse and photoluminescence spectroscopy. The carrier dynamics of one of the structures was analysed using temperature dependent up-conversion spectroscopy. These results were modelled with the solution of a three level system. Measurement of an n-type QWIP allows us to determine the inter-subband relaxation time of a p-type QWIP. The intersubband relaxation time of a p-type QWIP with 3 nm wide wells was determined to be 15 ps.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791659\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791659","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用金属有机气相外延(MOVPE)和分子束外延(MBE)制备了量子阱红外探测器(QWIP)结构。这些n型QWIP结构被制作成器件。利用光响应和光致发光光谱测量了亚带间和带间的跃迁能。利用温度相关上转换光谱分析了其中一种结构的载流子动力学。这些结果是用一个三能级系统的解来模拟的。测量n型QWIP可以确定p型QWIP的子带间弛豫时间。测定了3 nm宽孔的p型QWIP的亚带间弛豫时间为15 ps。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A comparative study of GaAs/AlGaAs quantum well infrared photodetectors grown by molecular beam epitaxy and metal organic vapour phase epitaxy

Quantum well infrared photodetector (QWIP) structures were grown by metal organic vapour phase epitaxy (MOVPE) and molecular beam epitaxy (MBE). These n-type QWIP structures were fabricated into devices. Inter-subband and inter-band transition energies were measured using photoresponse and photoluminescence spectroscopy. The carrier dynamics of one of the structures was analysed using temperature dependent up-conversion spectroscopy. These results were modelled with the solution of a three level system. Measurement of an n-type QWIP allows us to determine the inter-subband relaxation time of a p-type QWIP. The intersubband relaxation time of a p-type QWIP with 3 nm wide wells was determined to be 15 ps.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

自引率

0.00%

发文量